描述：IPB042N10N3G
英飛凌的 100V OptiMOS™ 功率 MOSFET 為高效率、高功率密度的 SMPS 提供了卓越的解決方案。 與次優(yōu)技術(shù)相比，該系列的 RDS(on) 和 FOM（品質(zhì)因數(shù)）均降低了 30%。
功能概要：IPB042N10N3G
出色的切換性能
全球最低RDS(on)
非常低的 Q g 和 Q gd
出色的柵極電荷 x R DS(on) 積 (FOM)
符合 RoHS 標(biāo)準(zhǔn)-無鹵
MSL1 評級 2
好處：IPB042N10N3G
環(huán)保
提高效率
最高功率密度
需要較少的并聯(lián)
最小的電路板空間消耗
易于設(shè)計的產(chǎn)品
潛在應(yīng)用：IPB042N10N3G
AC-DC SMPS 同步整流
48V–80V 系統(tǒng)的電機控制（即家用車輛、電動工具、卡車）
隔離式 DC-DC 轉(zhuǎn)換器（電信和數(shù)據(jù)通信系統(tǒng)）
48V 系統(tǒng)中的 Or-ing 開關(guān)和斷路器
D類音頻放大器
不間斷電源 (UPS)
制造商: Infineon
產(chǎn)品種類: MOSFET
RoHS: 詳細信息
技術(shù): Si
安裝風(fēng)格: SMD/SMT
封裝 / 箱體: TO-263-3
晶體管極性: N-Channel
通道數(shù)量: 1 Channel
Vds-漏源極擊穿電壓: 100 V
Id-連續(xù)漏極電流: 100 A
Rds On-漏源導(dǎo)通電阻: 4.2 mOhms
Vgs - 柵極-源極電壓: - 20 V, + 20 V
Vgs th-柵源極閾值電壓: 2 V
Qg-柵極電荷: 88 nC
最小工作溫度: - 55 C
最大工作溫度: + 175 C
Pd-功率耗散: 214 W
通道模式: Enhancement
商標(biāo)名: OptiMOS
封裝: ReelIPB042N10N3G
封裝: Cut Tape
封裝: MouseReel
商標(biāo): Infineon Technologies
配置: Single
下降時間: 14 ns
正向跨導(dǎo) - 最小值: 73 S
高度: 4.4 mm
長度: 10 mm
產(chǎn)品類型: MOSFET
上升時間: 59 ns
系列: OptiMOS 3
工廠包裝數(shù)量: 1000
子類別: MOSFETs
晶體管類型: 1 N-Channel
典型關(guān)閉延遲時間: 48 ns
典型接通延遲時間: 27 ns
寬度: 9.25 mm
零件號別名: IPB42N1N3GXT SP000446880 IPB042N10N3GATMA1
單位重量: 324 mg
以下物料均有現(xiàn)貨庫存：IPB042N10N3G
STM32F101RBT6
STM32F103CBT6
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IPB042N10N3G
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