ADRF5519BCPZN全新優(yōu)勢(shì)3520PCS和特點(diǎn)：
Integrated dual-channel RF front end
2-stage LNA and high power silicon SPDT switch
On-chip bias and matching
Single-supply operation
High power handling at TCASE = 105°C
LTE average power (9 dB PAR) full lifetime: 43 dBm
Gain
High gain mode: 35 dB typical at 2.6 GHz
Low gain mode: 14 dB typical at 2.6 GHz
Low noise figure
High gain mode: 1.0 dB typical at 2.6 GHz
Low gain mode: 1.0 dB typical at 2.6 GHz
High isolation
RXOUT-CHA and RXOUT-CHB: 45 dB typical
TERM-CHA and TERM-CHB: 60 dB typical
Low insertion loss: 0.5 dB typical at 2.6 GHz
High OIP3: 32 dBm typical
Power-down mode and low gain mode
Low supply current
High gain mode: 110 mA typical at 5 V
Low gain mode: 36 mA typical at 5 V
Power-down mode: 12 mA typical at 5 V
Positive logic control
6 mm × 6 mm, 40-lead LFCSP package
Pin compatible with the ADRF5545A and ADRF5549 10 W versions
樣品和批量供貨數(shù)量申請(qǐng)請(qǐng)聯(lián)系我們以下經(jīng)銷(xiāo)員：
深圳市和諧世家電子有限公司/朱源先生
電話：0755-82731800 手機(jī)18038133932
傳真：0755-82529210
深圳市福田區(qū)振華路118號(hào)華麗裝飾大廈2棟2單元320室
The ADRF5519BCPZN is a dual-channel, integrated RF, front-end multichip module designed for time division duplexing (TDD) applications that operates from 2.3 GHz to 2.8 GHz. is configured in dual channels with a cascading two stage low noise amplifier (LNA) and a high power silicon single pole, double-throw (SPDT) switch.
In high gain mode, the cascaded two-stage LNA and switch offer a low noise figure (NF) of 1.0 dB and a high gain of 35 dB at 2.6 GHz with an output third-order intercept point (OIP3) of 32 dBm (typical). In low gain mode, one stage of the two-stage LNA is in bypass, providing 14 dB of gain at a lower current of 36 mA. In power-down mode, the LNAs are turned off and the device draws 12 mA.
In transmit operation, RF inputs are connected to a termination pin (ANT-CHA or ANT-CHB connected to TERM-CHA or TERM-CHB, respectively). The switch provides a low insertion loss of 0.5 dB and handles a long-term evolution (LTE) average power (9 dB peak to average ratio (PAR)) of 43 dBm for full lifetime operation.
The device comes in a RoHS-compliant, compact, 6 mm × 6 mm, 40-lead LFCSP package.
APPLICATIONS主要應(yīng)用到：
Wireless infrastructure
TDD massive multiple input and multiple output and active antenna systems
TDD-based communication systems
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