產(chǎn)品屬性 屬性值 搜索類似
制造商: Vishay
產(chǎn)品種類: MOSFET
RoHS: 詳細(xì)信息
技術(shù): Si
安裝風(fēng)格: SMD/SMT
封裝 / 箱體: TO-263-3
晶體管極性: N-Channel
通道數(shù)量: 1 Channel
Vds-漏源極擊穿電壓: 600 V
Id-連續(xù)漏極電流: 29 A
Rds On-漏源導(dǎo)通電阻: 125 mOhms
Vgs - 柵極-源極電壓: - 30 V, + 30 V
Vgs th-柵源極閾值電壓: 2.8 V
Qg-柵極電荷: 85 nC
最小工作溫度: - 55 C
最大工作溫度: + 150 C
Pd-功率耗散: 250 W
通道模式: Enhancement
封裝: Bulk
商標(biāo): Vishay / Siliconix
配置: Single
下降時(shí)間: 36 ns
高度: 20.82 mm
長度: 15.87 mm
產(chǎn)品類型: MOSFET
上升時(shí)間: 32 ns
系列: E
工廠包裝數(shù)量: 480
子類別: MOSFETs
典型關(guān)閉延遲時(shí)間: 63 ns
典型接通延遲時(shí)間: 19 ns
寬度: 5.31 mm
單位重量: 4 g
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