IPW65R110CFDA 品牌;INFINEON/英飛凌
IPW65R110CFDA 封裝;TO-247
IPW65R110CFDA 包裝;30
IPW65R110CFDA 批號;21+
規(guī)格
產(chǎn)品屬性
屬性值
搜索類似
制造商:
Infineon
產(chǎn)品種類:
MOSFET
RoHS:
詳細信息
技術:
Si
安裝風格:
Through Hole
封裝 / 箱體:
TO-247-3
晶體管極性:
N-Channel
通道數(shù)量:
1 Channel
Vds-漏源極擊穿電壓:
650 V
Id-連續(xù)漏極電流:
31.2 A
Rds On-漏源導通電阻:
99 mOhms
Vgs - 柵極-源極電壓:
- 20 V, + 20 V
Vgs th-柵源極閾值電壓:
3.5 V
Qg-柵極電荷:
118 nC
最小工作溫度:
- 40 C
最大工作溫度:
+ 150 C
Pd-功率耗散:
277.8 W
通道模式:
Enhancement
資格:
AEC-Q101
商標名:
CoolMOS
封裝:
Tube
商標:
Infineon Technologies
配置:
Single
下降時間:
6 ns
高度:
21.1 mm
長度:
16.13 mm
產(chǎn)品類型:
MOSFET
上升時間:
11 ns
系列:
CoolMOS CFDA
工廠包裝數(shù)量:
30
子類別:
MOSFETs
晶體管類型:
1 N-Channel
典型關閉延遲時間:
68 ns
典型接通延遲時間:
16 ns
寬度:
5.21 mm
零件號別名:
SP000895236 IPW65R11CFDAXK IPW65R110CFDAFKSA1
單位重量:
6 g
以下為公司現(xiàn)貨庫存，歡迎來電咨詢！
譚先生；18529116415 微信同號
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