產(chǎn)品屬性 屬性值 搜索類似
制造商: Infineon
產(chǎn)品種類: IGBT 晶體管
RoHS: 詳細信息
技術(shù): Si
封裝 / 箱體: TO-247-3
安裝風(fēng)格: Through Hole
配置: Single
集電極—發(fā)射極最大電壓 VCEO: 1.2 kV
集電極—射極飽和電壓: 1.9 V
柵極/發(fā)射極最大電壓: 30 V
在25 C的連續(xù)集電極電流: 50 A
Pd-功率耗散: 180 W
最小工作溫度: - 55 C
最大工作溫度: + 150 C
系列: Rectifier Diode Module
封裝: Tube
商標(biāo): Infineon / IR
集電極最大連續(xù)電流 Ic: 50 A
柵極—射極漏泄電流: 100 nA
產(chǎn)品類型: IGBT Transistors
25
子類別: IGBTs
零件號別名: IRG7PH35UDPBF SP001537540
單位重量: 38 g
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