Features
N-channel - Enhancement mode
AEC qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green Product (RoHS compliant)
100% Avalanche tested
類別
分立半導(dǎo)體產(chǎn)品
晶體管 - FET,MOSFET - 單個
制造商
Infineon Technologies
系列
Automotive, AEC-Q101, OptiMOS™
在售
FET 類型
N 通道
技術(shù)
MOSFET(金屬氧化物)
漏源電壓(Vdss)
40 V
25°C 時電流 - 連續(xù)漏極 (Id)
50A(Tc)
驅(qū)動電壓(最大 Rds On,最小 Rds On)
4.5V,10V
不同 Id、Vgs 時導(dǎo)通電阻(最大值)
7.3 毫歐 @ 50A,10V
不同 Id 時 Vgs(th)(最大值)
2.2V @ 17μA
不同 Vgs 時柵極電荷 (Qg)(最大值)
30 nC @ 10 V
Vgs(最大值)
+20V,-16V
不同 Vds 時輸入電容 (Ciss)(最大值)
2340 pF @ 25 V
FET 功能
-
功率耗散(最大值)
46W(Tc)
工作溫度
-55°C ~ 175°C(TJ)
安裝類型
表面貼裝型
供應(yīng)商器件封裝
PG-TO252-3-313
封裝/外殼
TO-252-3,DPak(2 引線 + 接片),SC-63
基本產(chǎn)品編號
IPD50N04
新聞:人民幣全球支付占比創(chuàng)新高;
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