產(chǎn)品屬性 屬性值 搜索類似
制造商: onsemi
產(chǎn)品種類: MOSFET
RoHS: 詳細信息
技術(shù): Si
安裝風格: Through Hole
封裝 / 箱體: TO-220-3
晶體管極性: N-Channel
通道數(shù)量: 1 Channel
Vds-漏源極擊穿電壓: 600 V
Id-連續(xù)漏極電流: 9.5 A
Rds On-漏源導(dǎo)通電阻: 730 mOhms
Vgs - 柵極-源極電壓: - 30 V, + 30 V
Vgs th-柵源極閾值電壓: 4 V
Qg-柵極電荷: 44 nC
最小工作溫度: - 55 C
最大工作溫度: + 150 C
Pd-功率耗散: 50 W
通道模式: Enhancement
封裝: Tube
商標: onsemi / Fairchild
配置: Single
下降時間: 77 ns
高度: 16.3 mm
長度: 10.67 mm
產(chǎn)品類型: MOSFET
上升時間: 69 ns
系列: FQPF10N60C
1000
子類別: MOSFETs
晶體管類型: 1 N-Channel
類型: MOSFET
典型關(guān)閉延遲時間: 144 ns
典型接通延遲時間: 23 ns
寬度: 4.7 mm
零件號別名: FQPF10N60C_NL
單位重量: 2 g
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