This 6 A High Temperature Alternistor Triac solid state switch
series is designed for AC switching and phase control applications
such as motor speed and temperature modulation controls, lighting
controls, and static switching relays.
Sensitive type components guarantee gate control in Quadrants I
& IV as needed for digital control circuitry.
Alternistor type components only operate in quadrants I, II, & III
and are used in circuits requiring high dv/dt capability.
Standard type devices normally operate in Quadrants I & III
triggered from AC line
Features & Benefits
■ 150°C maximum junction
temperature
■ Voltage capability up
to 800V
■ Surge capability up
to 80A at 60Hz half cycle
■ Solid-state switching
eliminates arcing or contact
bounce that create voltage
transients
■ No contacts to wear out from
reaction of switching events
■ Restricted (or limited) RFI
generation, depending on
activation point of
sine wave
■ Requires only a short gate
activation pulse in each halfcycle
■ Halogen free and RoHS
compliant
Main Features
Symbol Value Unit
I
T(RMS) 6 A
VDRM/VRRM 400 to 800 V
I
GT (Q1) 10 to 50 mA
Schematic Symbol
MT2 MT1
G
Applications
Excellent for AC switching and phase control applications such as
heating, lighting, and motor speed controls.
Typical applications are AC solid-state switches, light dimmers,
power tools, home/brown goods and white goods appliances.
Alternistor Triacs (no snubber required) are used in applications
with high inductive loads requiring the highest commutation
performance.
Internally constructed isolated packages are offered for ease of
heat sinking with highest isolation voltage.
RoHS
Resources Accessories Samples
Additional Information
Agency Approvals & Environmental
Enironmental Approvals
RoHS
Note: UL recognition agency file number E71639 (L package only)
Thyristors Datasheet
© 2021 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: GD. 05/04/21
2
LJxx06xx & QJxx06xHx & QJxx06xx Series
6 Amp High Temp Sensitive, Standard & Alternistor (High Communication) Triacs
Absolute Maximum Ratings — Alternistor Triac (3 Quadrants)
Symbol Parameter Value Unit
VDSM/VRSM Peak non-repetitive blocking voltage PW=100 μs
600V 700 V
800V 1000 V
I
T(RMS) RMS on-state current (full sine wave)
QJxx06VHy/QJxx06DHy TC = 130°C
QJxx06LHy TC = 125°C 6 A
QJxx06RHy/QJxx06NHy TC = 140°C
I
TSM
Non repetitive surge peak on-state
current
(full cycle, TJ
initial = 25°C)
f = 50 Hz t = 20 ms QJxx06VHy/QJxx06DHy 60
A QJxx06LHy/QJxx06RHy/QJxx06NHy 65
f = 60 Hz t = 16.7 ms QJxx06VHy/QJxx06DHy 72
QJxx06LHy/QJxx06RHy/QJxx06NHy 80
I
2
t I
2
t Value for fusing tp
= 8.3 ms QJxx06VHy/QJxx06DHy 21.5
A2
s QJxx06LHy/QJxx06RHy/QJxx06NHy 26.6
di/dt Critical rate of rise of on-state current f = 60 Hz TJ = 150°C 70 A/μs
I
GTM Peak gate trigger current t
p
=20μs TJ = 150°C 4 A
PG(AV) Average gate power dissipation TJ = 150°C 0.5 W
Tstg Storage temperature range -40 to 150 °C
TJ Operating junction temperature range -40 to 150 °C
Absolute Maximum Ratings — Sensitive Triac (4 Quadrants)
Symbol Parameter Value Unit
VDSM/VRSM Peak non-repetitive blocking voltage PW=100 μs 700 V
I
T(RMS) RMS on-state current (full sine wave) LJxx06Vy/LJxx06Dy TC = 130°C 6 A
I
TSM
Non repetitive surge peak on-state current
(full cycle, TJ
initial = 25°C)
f = 50 Hz t = 20 ms 60
A
f = 60 Hz t = 16.7 ms 72
I
2
t I
2
t Value for fusing tp
= 8.3 ms 21.5 A2
s
di/dt Critical rate of rise of on-state current
I
G = 50mA with 0.1μs rise time f = 60 Hz TJ = 150°C 70 A/μs
I
GTM Peak gate trigger current tp
=20μs TJ = 150°C 4 A
PG(AV) Average gate power dissipation TJ = 150°C 0.4 W
Tstg Storage temperature range -40 to 150 °C
TJ Operating junction temperature range -40 to 150 °C
Note: xx=voltage/10, y = sensitivity
Absolute Maximum Ratings — Standart Triac (4 Quadrants)
Symbol Parameter Value Unit
VDSM/VRSM Peak non-repetitive blocking voltage PW=100 μs 800V 1000 V
I
T(RMS) RMS on-state current (full sine wave) QJxx06Ly TC = 125°C
6 A
QJxx06Ry/QJxx06Ny TC = 140°C
I
TSM
Non repetitive surge peak on-state current
(full cycle, TJ
initial = 25°C)
f = 50 Hz t = 20 ms 100
A
f = 60 Hz t = 16.7 ms 120
I
2
t I
2
t Value for fusing t
p
= 8.3 ms 26.5 A2
s
di/dt Critical rate of rise of on-state current f = 60 Hz TJ = 150°C 70 A/μs
I
GTM Peak gate trigger current tp
=20μs TJ = 150°C 4 A
PG(AV) Average gate power dissipation TJ = 150°C 0.5 W
Tstg Storage temperature range -40 to 150 °C
TJ Operating junction temperature range -40 to 150 °C
