規格信息：
制造商:Infineon
產品種類:IGBT 晶體管
RoHS:是
技術:Si
封裝 / 箱體:TO-247-3
安裝風格:Through Hole
配置:Single
集電極—發射極最大電壓 VCEO:600 V
集電極—射極飽和電壓:1.95 V
柵極/發射極最大電壓:20 V
在25 C的連續集電極電流:60 A
Pd-功率耗散:187 W
最小工作溫度:- 40 C
最大工作溫度:+ 175 C
系列:HighSpeed 3
封裝:Tube
高度:20.7 mm
長度:15.87 mm
寬度:5.31 mm
商標:Infineon Technologies
柵極—射極漏泄電流:100 nA
產品類型:IGBT Transistors
工廠包裝數量:240
子類別:IGBTs
商標名:TRENCHSTOP
零件號別名:IKW30N60H3FKSA1 IKW3N6H3XK SP000703042
單位重量:6.500 g
IKW30N60H3,全新原裝當天發貨或門市自取，量大價優，電子元器件BOM表一站式配單配套,穩定供應,因產品過多原因我們未對一.一產品進行參數描述，如需了解更多產品信息和價格歡迎咨詢和購買請聯系我們的工作人員.
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