該RA60H1317M是60-watt RF的MOSFET放大器模塊12.5-volt移動(dòng)電臺(tái)在向工作在135-175-MHz范圍.電池可以直接連接到漏極增強(qiáng)型MOSFET晶體管.如果沒(méi)有門電壓(VGG進(jìn)入=0V),只有一小漏電流排水和輸入信號(hào)衰減的RF高達(dá)60 dB.輸出功率和漏電流增加門極電壓上升.與周圍4V（最低），輸出功率和電壓門漏電流大幅增加.額定輸出功率變?cè)?.5V（典型值）和5V（最大）提供.在VGG=5V,的典型柵極電流1 mA.該模塊是專為非線性調(diào)頻調(diào)制，但可能也可用于線性調(diào)制通過(guò)設(shè)置靜態(tài)漏電流隨柵極電壓和輸出功率控制輸入功率.
特征
•增強(qiáng)型MOSFET晶體管(IDD≅0@ VDD=12.5V, VGG=0V)
• Pout>60W,ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW
•寬帶頻率范圍：135-175MHz
•低功耗控制電流IGG=1mA (typ)在VGG=5V
•模塊尺寸：66 x 21 x 9.88 mm
•線性操作有可能通過(guò)設(shè)置靜態(tài)漏電流隨柵極電壓和輸出功率控制與輸入功率
三菱（MITSUBISHI）：（射頻功率放大模塊）
RA60H4452M1、RA60H4047M1、RA60H3847M1、RA60H1317M1A、RA60H1317M、RA55H4452M、RA55H4047M、RA55H3847M、RA55H3340M、RA45H8994M1、RA45H7687M1、RA45H4452M、RA45H4047M、RA45H4045MR、RA35H1516M、RA33H1516M1、RA30H4552M1、RA30H4452M、RA30H4047M1、RA30H4047M、RA30H3340M、RA30H2127M、RA30H1721M、RA30H1317M1、RA30H1317M、RA30H0608M、RA20H8994M、RA20H8087M、RA18H1213G、RA13H8891MA、RA13H8891MB、RA13H4452M、RA13H4047M、RA13H3340M、RA13H1317M、RA08H1317M、RA08N1317M、RA07N4452M、RA07N4047M、RA07N3340M、RA07M4452MSA、RA07M4452M、RA07M4047MSA、RA07M4047M、RA07M3843M、RA07M3340M、RA07M2127M、RA07M1317MSA、RA07M1317M、RA07M0608M、RA07H4452M、RA07H4047M、RA07H3340M、RA07H0608M、RA06H8285M、RA05H9595M、RA05H8693M、RA03M9595M、RA03M8894M、RA03M8087M、RA03M4547MD、RA03M4043MD、RA03M3540MD、RA02M8087MD、RA01L9595M、RA01L8693MA等RA全系列。
