產(chǎn)品屬性 屬性值 搜索類似
制造商: Infineon
產(chǎn)品種類: MOSFET
RoHS: 詳細(xì)信息
技術(shù): Si
安裝風(fēng)格: Through Hole
封裝 / 箱體: TO-220-3
晶體管極性: N-Channel
通道數(shù)量: 1 Channel
Vds-漏源極擊穿電壓: 200 V
Id-連續(xù)漏極電流: 44 A
Rds On-漏源導(dǎo)通電阻: 54 mOhms
Vgs - 柵極-源極電壓: - 30 V, + 30 V
Vgs th-柵源極閾值電壓: 1.8 V
Qg-柵極電荷: 91 nC
小工作溫度: - 55 C
大工作溫度: + 175 C
Pd-功率耗散: 3.8 W
通道模式: Enhancement
封裝: Tube
商標(biāo): Infineon / IR
配置: Single
下降時間: 47 ns
正向跨導(dǎo) - 小值: 17 S
高度: 15.65 mm
長度: 10 mm
產(chǎn)品類型: MOSFET
上升時間: 95 ns
工廠包裝數(shù)量: 50
子類別: MOSFETs
晶體管類型: 1 N-Channel
典型關(guān)閉延遲時間: 29 ns
典型接通延遲時間: 16 ns
寬度: 4.4 mm
零件號別名: IRFB38N20DPBF SP001556010
單位重量: 2 g
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