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      IRFR1018ETRPBF

      發(fā)布時間:2021/9/16 10:26:00 訪問次數(shù):195

      產(chǎn)品屬性 屬性值 搜索類似
      制造商: Infineon
      產(chǎn)品種類: MOSFET
      技術(shù): Si
      安裝風(fēng)格: SMD/SMT
      封裝 / 箱體: TO-252-3
      晶體管極性: N-Channel
      通道數(shù)量: 1 Channel
      Vds-漏源極擊穿電壓: 60 V
      Id-連續(xù)漏極電流: 79 A
      Rds On-漏源導(dǎo)通電阻: 7.1 mOhms
      Vgs - 柵極-源極電壓: - 20 V, + 20 V
      Vgs th-柵源極閾值電壓: 1.8 V
      Qg-柵極電荷: 69 nC
      小工作溫度: - 55 C
      大工作溫度: + 175 C
      Pd-功率耗散: 110 W
      通道模式: Enhancement
      封裝: Reel
      封裝: Cut Tape
      封裝: MouseReel
      商標(biāo): Infineon / IR
      配置: Single
      高度: 2.3 mm
      長度: 6.5 mm
      產(chǎn)品類型: MOSFET
      工廠包裝數(shù)量: 2000
      子類別: MOSFETs
      晶體管類型: 1 N-Channel
      寬度: 6.22 mm
      零件號別名: IRFR1018ETRPBF SP001566962
      單位重量: 330 mg


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