MSKSEMI原廠現(xiàn)貨，MSK50N03DF DFN3*3-8L 46A30V場效應(yīng)管，深圳現(xiàn)貨。
Description
The MSK50N03DF is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The MSK50N03DF meet the RoHS and Green
Product Summary
Green Device Available
Super Low Gate Charge
Excellent CdV/dt effect decline
Advanced high cell density Trench
technology
VDS Drain-Source Voltage 30V
VGS Gate-Source Voltage ±20V
ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 46A
ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 29A
ID@TA=25℃ Continuous Drain Current, VGS @ 10V1 11A
ID@TA=70℃ Continuous Drain Current, VGS @ 10V1 9A
IDM Pulsed Drain Current2 92A
描述
MSK50N03DF是高單元密度溝槽式N-ch MOSFET，為大多數(shù)同步降壓變換器應(yīng)用提供出色的RDSON和柵極電荷。MSK50N03DF符合RoHS和綠色標(biāo)準(zhǔn)
產(chǎn)品概要
綠色環(huán)保產(chǎn)品
超低柵極電荷
良好的CdV/dt效應(yīng)
先進(jìn)的高密度溝槽
技術(shù)
VDS漏源極電壓30V
VGS柵極源電壓±20 V
ID@TC=25℃連續(xù)漏電流，10V1 46 A時的VGS
ID@TC=100℃連續(xù)漏電流，10V1 29 A時的VGS
ID@TA=25℃連續(xù)漏電流，10v11 A時的VGS
ID@TA=70℃連續(xù)漏電流，10V1 9 A時的VGS
IDM脈沖漏極電流 92A
MSK50N03DF DFN3*3-8L
