MSKSEMI代理廠家，MSK20P80GNF DFN5*6-8L 場(chǎng)效應(yīng)管80A12V，深圳現(xiàn)貨。
General Description
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
Features
-18V,-80A, RDS(ON) =2.7mΩ@VGS = - 10V
Improved dv/dt capability
Fast switching
Green Device Available
Applications
Notebook
Load Switch
Networking
Hand-Held Instruments
VDS Drain-Source Voltage -18V
VGS Gate-Source Voltage ±12V
ID Drain Current – Continuous (TC=25℃) -80A
Drain Current – Continuous (TC=100℃) -54A
概述
這些P溝道增強(qiáng)型功率場(chǎng)效應(yīng)晶體管使用溝槽DMOS技術(shù)。這種先進(jìn)的技術(shù)特別適合最小化導(dǎo)通電阻，提供優(yōu)越的開關(guān)性能，并在雪崩和換向模式下承受高能脈沖。這些設(shè)備非常適合高效快速切換應(yīng)用。
特征
-18V，-80A，RDS（開）=2.7mΩ@VGS=-10V
改進(jìn)的dv/dt能力
快速切換
綠色設(shè)備可用
應(yīng)用
筆記本
負(fù)荷開關(guān)
網(wǎng)絡(luò)
手持儀器
VDS漏源極電壓-18V
VGS柵極源電壓±12V
ID漏電流-連續(xù)（TC=25℃）-80A
漏極電流-連續(xù)（TC=100℃）-54A
MSK20P80GNF DFN5*6-8L
