IRF630NPBF

參數(shù)名稱參數(shù)值Source Content uidIRF630NPBF是否Rohs認證符合生命周期ActiveObjectid8006007269包裝說明FLANGE MOUNT, R-PSFM-T3Reach Compliance CodecompliantECCN代碼EAR99Factory Lead Time52 weeks風險等級0.99Samacsys DescriptionIRF630NPBF N-Channel MOSFET, 9.3 A, 200 V HEXFET, 3-Pin TO-220AB InfineonSamacsys ManufacturerInfineon其他特性AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE雪崩能效等級（Eas）94 mJ外殼連接DRAIN配置SINGLE WITH BUILT-IN DIODE最小漏源擊穿電壓200 V最大漏極電流 (Abs) (ID)9.3 A最大漏極電流 (ID)9.3 A最大漏源導通電阻0.3 ΩFET 技術METAL-OXIDE SEMICONDUCTORJEDEC-95代碼TO-220ABJESD-30 代碼R-PSFM-T3JESD-609代碼e3元件數(shù)量1端子數(shù)量3工作模式ENHANCEMENT MODE最高工作溫度175 °C封裝主體材料PLASTIC/EPOXY封裝形狀RECTANGULAR封裝形式FLANGE MOUNT極性/信道類型N-CHANNEL最大功率耗散 (Abs)82 W最大脈沖漏極電流 (IDM)37 A認證狀態(tài)Not Qualified子類別FET General Purpose Power表面貼裝NO端子面層MATTE TIN OVER NICKEL端子形式THROUGH-HOLE端子位置SINGLE晶體管應用SWITCHING晶體管元件材料SILICON