制造商: IXYS
產(chǎn)品種類: MOSFET
RoHS: 詳細(xì)信息
技術(shù): Si
安裝風(fēng)格: Through Hole
封裝 / 箱體: TO-220-3
晶體管極性: N-Channel
通道數(shù)量: 1 Channel
Vds-漏源極擊穿電壓: 250 V
Id-連續(xù)漏極電流: 50 A
Rds On-漏源導(dǎo)通電阻: 60 mOhms
Vgs - 柵極-源極電壓: - 30 V, + 30 V
Vgs th-柵源極閾值電壓: 3 V
Qg-柵極電荷: 78 nC
最小工作溫度: - 55 C
最大工作溫度: + 150 C
Pd-功率耗散: 400 W
通道模式: Enhancement
商標(biāo)名: HiPerFET
系列: IXTP50N25
封裝: Tube
商標(biāo): IXYS
配置: Single
產(chǎn)品類型: MOSFET
50
子類別: MOSFETs
晶體管類型: 1 N-Channel
單位重量: 2 g
IXTA270N04T4
IXTA270N04T4-7
IXTA340N04T4
IXTA340N04T4-7
IXTA380N036T4-7
IXTH270N04T4
IXTH340N04T4
IXTN660N04T4
IXTP230N04T4
IXTP230N04T4M
