描繪并區(qū)分一個(gè)集成電路中各種組成器件的主要結(jié)構(gòu)特征
發(fā)布時(shí)間:2015/11/14 16:06:29 訪問(wèn)次數(shù):1451
1.描繪并區(qū)分一個(gè)集成電路中IP4062CX18/LF各種組成器件的主要結(jié)構(gòu)特征。
2.解釋?xiě)?yīng)用于集成電路中的不同隔離結(jié)構(gòu)的作用。
3.描繪并區(qū)分雙極型和MOS晶體管的工作原理。
4.列出不同MOS柵結(jié)構(gòu)的種類(lèi)和各自的優(yōu)點(diǎn)。
5.描繪并區(qū)分Bi-MOS的各個(gè)部分。
參考文獻(xiàn)
[ 1 ] Camenzind,H. R.,Electron.ic In,tegrated Systems Des/gn.,1972,Van Nostrand Reinhold,Princeton,NJ:85.
[ 2 ] Singer,P., " Gearing Up for Cigabits, " Semicon,ductor In,tern,ation,al,Nov. 1994:34.
L3 ] De Omellas, S., " Plasma Etch of Ferroelectric Capacitors in FeRAMs and DRAMs," Semicon.ductorIn,tern,ational,Sep. 1997 :103.
[ 4 ] Camenzind , H. R. , ELectronic In,tegrated Systems Design , 1972 , Van Nostrand Reinhold , Princeton , NJ : 141 .
[5] Cleavelin, C., Columbo, L., Nimi, H., et al., Oxidation. and Gate Dielectrics, Han.dbook of Semicon.ductor
Man,ufactu,rin,g Techn,ology,2008,CRC Press,New York,NY,9 -29.
[ 6 ] Pauleau,Y., "lnterconnect Material_s for VLSI Circuits," Solid State TechnoLogy,Apr. 1987 :157.
L7 ] "Industry News," Semicon,ductor In,tern,ational,Cahners Publishing,Apr. 1994:16.
[ 8 ] Frank, D., Hoffman, T., Nguyen, B. Y., et al., Com,parison, Study of Fin,FEts: SO/ vs. Bulk, SOI Industry
Consortium ,www. soic,onsortium. org.
[ 9 ] Ghandhi, S. K. , V/S/ Fabrication, PrirzcipLes , 1994 ,John Wiley & Sons ,Inc., New York , NY :717.
[ 10 ] Wolf,S., " A Review of lC Isolation Technologies-Part 8 , " Solid State Techn.ology,PennWell Publishing,Jun. 1993 :97.
[ 11 ] Peters,L.,"High Hopes for High Energy Ion Implantation," Semiconductor Irzternational,Cahners Publishing,
Jun. 1993 :84.
[12] Yarling, C. B., " M. I. Current, Ion Implantation for the Challenges of ULSI and 200-mm Wafer
Production," MicroeLectronic Manu)facturin,g an,d Testin,g,Mar. 1988 :15.
[ 13 ] Yallup,K., " SOI Provide Total DielectricIsolation , " Semicon,du.ctor In,tern,ation,al,Cahners Publishing,Jul.
[14 ] Cunningham, A., " The PC inside Your Phone: A Guide to the System-on-Chip," Arstechnica, Apr.10 ,2013.
[ 15 ] Anderson, P. W., " Elec:tronic and Superconductors," in E. Ante ' bi ( ed. ) , The ELectron,ic Epoch, Van
Nostrand Re,inhold , Princeton , NJ :66.
[ 16 ] Gabriel,K., " Engineering Microscopic Machines, " Scien.Ufic American,Sep. 1995 :150.
[ 17] Bates,J.,"Rechargeable Thin-Film Lithium Microbatteries," Sotid .State TeclmoLogy-,PennWell Publishing,
Jul. 1993 :59.
[ 18 ] Singer,P.,"The Optoelectronics Industry: Has It Seen the Light?" Semicon,ductor In,tern,ation,aI,Cahners
Publishing,Jul. 1993 :70.
1.描繪并區(qū)分一個(gè)集成電路中IP4062CX18/LF各種組成器件的主要結(jié)構(gòu)特征。
2.解釋?xiě)?yīng)用于集成電路中的不同隔離結(jié)構(gòu)的作用。
3.描繪并區(qū)分雙極型和MOS晶體管的工作原理。
4.列出不同MOS柵結(jié)構(gòu)的種類(lèi)和各自的優(yōu)點(diǎn)。
5.描繪并區(qū)分Bi-MOS的各個(gè)部分。
參考文獻(xiàn)
[ 1 ] Camenzind,H. R.,Electron.ic In,tegrated Systems Des/gn.,1972,Van Nostrand Reinhold,Princeton,NJ:85.
[ 2 ] Singer,P., " Gearing Up for Cigabits, " Semicon,ductor In,tern,ation,al,Nov. 1994:34.
L3 ] De Omellas, S., " Plasma Etch of Ferroelectric Capacitors in FeRAMs and DRAMs," Semicon.ductorIn,tern,ational,Sep. 1997 :103.
[ 4 ] Camenzind , H. R. , ELectronic In,tegrated Systems Design , 1972 , Van Nostrand Reinhold , Princeton , NJ : 141 .
[5] Cleavelin, C., Columbo, L., Nimi, H., et al., Oxidation. and Gate Dielectrics, Han.dbook of Semicon.ductor
Man,ufactu,rin,g Techn,ology,2008,CRC Press,New York,NY,9 -29.
[ 6 ] Pauleau,Y., "lnterconnect Material_s for VLSI Circuits," Solid State TechnoLogy,Apr. 1987 :157.
L7 ] "Industry News," Semicon,ductor In,tern,ational,Cahners Publishing,Apr. 1994:16.
[ 8 ] Frank, D., Hoffman, T., Nguyen, B. Y., et al., Com,parison, Study of Fin,FEts: SO/ vs. Bulk, SOI Industry
Consortium ,www. soic,onsortium. org.
[ 9 ] Ghandhi, S. K. , V/S/ Fabrication, PrirzcipLes , 1994 ,John Wiley & Sons ,Inc., New York , NY :717.
[ 10 ] Wolf,S., " A Review of lC Isolation Technologies-Part 8 , " Solid State Techn.ology,PennWell Publishing,Jun. 1993 :97.
[ 11 ] Peters,L.,"High Hopes for High Energy Ion Implantation," Semiconductor Irzternational,Cahners Publishing,
Jun. 1993 :84.
[12] Yarling, C. B., " M. I. Current, Ion Implantation for the Challenges of ULSI and 200-mm Wafer
Production," MicroeLectronic Manu)facturin,g an,d Testin,g,Mar. 1988 :15.
[ 13 ] Yallup,K., " SOI Provide Total DielectricIsolation , " Semicon,du.ctor In,tern,ation,al,Cahners Publishing,Jul.
[14 ] Cunningham, A., " The PC inside Your Phone: A Guide to the System-on-Chip," Arstechnica, Apr.10 ,2013.
[ 15 ] Anderson, P. W., " Elec:tronic and Superconductors," in E. Ante ' bi ( ed. ) , The ELectron,ic Epoch, Van
Nostrand Re,inhold , Princeton , NJ :66.
[ 16 ] Gabriel,K., " Engineering Microscopic Machines, " Scien.Ufic American,Sep. 1995 :150.
[ 17] Bates,J.,"Rechargeable Thin-Film Lithium Microbatteries," Sotid .State TeclmoLogy-,PennWell Publishing,
Jul. 1993 :59.
[ 18 ] Singer,P.,"The Optoelectronics Industry: Has It Seen the Light?" Semicon,ductor In,tern,ation,aI,Cahners
Publishing,Jul. 1993 :70.
上一篇:集成電路的介紹
熱門(mén)點(diǎn)擊
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- 管踣敷設(shè)
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- 具有準(zhǔn)直器的濺射
- 離子注入?yún)^(qū)域的雜質(zhì)濃度
- 描繪并區(qū)分一個(gè)集成電路中各種組成器件的主要結(jié)
- 臺(tái)階覆蓋
- TN-S系統(tǒng)防雷器的配置
- 光刻膠性能的要素
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